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PRELIMINARY DATA SHEET
MICRONAS
HAL 800 Programmable Linear Hall Effect Sensor
Edition Oct. 20, 1999 6251-441-1DS
MICRONAS
HAL 800
Contents Page Section Title
3 3 3 4 4 4 4 4 5 5 7 9 9 10 11 11 11 11 12 12 13 14 14 17 17 17 18 18 19 19 19 21 22 23 23 24
1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. 2. 2.1. 2.2. 2.3. 2.3.1. 2.3.2. 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. 3.8. 4. 4.1. 4.2. 4.3. 4.4. 5. 5.1. 5.2. 5.3. 5.4. 5.5. 5.6. 6.
Introduction Major Applications Features Marking Code Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Solderability Pin Connections and Short Descriptions Functional Description General Function Digital Signal Processing and EEPROM Calibration Procedure General Procedure Calibration of Angle Sensor Specifications Outline Dimensions Dimensions of Sensitive Area Position of Sensitive Area Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics Typical Characteristics Application Notes Application Circuit Temperature Compensation Ambient Temperature EMC and ESD Programming of the Sensor Definition of Programming Pulses Definition of the Telegram Telegram Codes Number Formats Register Information Programming Information Data Sheet History
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Micronas
HAL 800
Programmable Linear Hall Effect Sensor
1. Introduction The HAL 800 is an universal magnetic field sensor with a linear output based on the Hall effect. The IC is designed and produced in sub-micron CMOS technology and can be used for angle or distance measurements if combined with a rotating or moving magnet. The major characteristics like magnetic field range, sensitivity, output quiescent voltage (output voltage at B = 0 mT), and output voltage range are programmable in a non-volatile memory. The sensor has a ratiometric output characteristic, which means that the output voltage is proportional to the magnetic flux and the supply voltage. The HAL 800 features a temperature compensated Hall plate with choppered offset compensation, an A/D converter, digital signal processing, a D/A converter with output driver, an EEPROM memory with redundancy and lock function for the calibration data, a serial interface for programming the EEPROM, and protection devices at all pins. The internal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress do not degrade the sensor accuracy. The HAL 800 is programmable by modulating the supply voltage. No additional programming pin is needed. The easy programmability allows a 2-point calibration by adjusting the output voltage directly to the input signal (like mechanical angle, distance or current). An individual adjustment of each sensor during the customers manufacturing process is possible. With this calibration procedure the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated in the final assembly. In addition, the temperature compensation of the Hall IC can be fit to all common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables an operation over the full temperature range with high accuracy. The calculation of the individual sensor characteristics and the programming of the EEPROM memory can easily be done with a PC and the application kit from Micronas. The HAL 800 eases logistic because its characteristics can be programmed in a wide range. Therefore, one Hall IC type can be used for various applications. The sensor is designed for hostile industrial and automotive applications and operates with typically 5 V supply voltage in the ambient temperature range from -40 C up to 150 C. The HAL 800 is available in the very small leaded package TO-92UT. 1.1. Major Applications Due to the sensor's versatile programming characteristics, the HAL 800 is the optimal system solution for applications such as: - contactless potentiometers, - rotary position measurement, - linear position detection, - magnetic field and current measurement.
1.2. Features - high precision linear Hall effect sensor with ratiometric output - multiple programmable magnetic characteristics with non-volatile memory - digital signal processing - temperature characteristics programmable for matching all common magnetic materials - programmable clamping voltages - programming with a modulation of the supply voltage - lock function and redundancy for EEPROM memory
- operates from -40 C up to 150 C ambient temperature
- operates from 4.5 V up to 5.5 V supply voltage - operates with static magnetic fields and dynamic magnetic fields up to 2 kHz - choppered offset compensation - overvoltage and reverse-voltage protection at all pins - magnetic characteristics extremely robust against mechanical stress - short-circuit protected push-pull output - EMC optimized design
Micronas
3
HAL 800
1.3. Marking Code The HAL 800 has a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. 1.6. Solderability Package TO-92UT: according to IEC68-2-58 During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity.
Type A HAL 800 800A
Temperature Range K 800K E 800E C 800C
1.4. Operating Junction Temperature Range (TJ) A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C E: TJ = -40 C to +100 C C: TJ = 0 C to +100 C The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). The relationship between ambient temperature (TA) and junction temperature is explained in Section 4.3. on page 18.
1.7. Pin Connections and Short Descriptions
Pin No. 1 2 3
Pin Name VDD GND OUT
Type IN
Short Description Supply Voltage and Programming Pin Ground
OUT
Push Pull Output
1
VDD
1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A, K, E, or C Package: UT for TO-92UT Type: 800 Example: HAL800UT-A
OUT 3
2
GND
Fig. 1-1: Pin configuration
Type: 800 Package: TO-92UT Temperature Range: TJ = -40C to +170C
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors".
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Micronas
HAL 800
2. Functional Description 2.1. General Function The HAL 800 is a monolithic integrated circuit which provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the supply voltage. The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. This voltage is converted to a digital value, processed in the Digital Signal Processing Unit (DSP) according to the EEPROM programming, converted to an analog voltage with ratiometric behavior, and stabilized by a push-pull output transistor stage. The function and the parameters for the DSP are detailed explained in Section 2.2. on page 7. The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset. As long as the LOCK register is not set, the output characteristic can be adjusted by modifying the EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2-1). In the supply voltage range from 4.5 V up to 5.5 V, the sensor generates an analog output voltage. After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. The analog output is switched off during the communication. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. The circuitry also rejects offset shifts due to mechanical stress from the package. The non-volatile memory is equipped with redundant EEPROM cells. In addition, the sensor IC is equipped with devices for overvoltage and reverse voltage protection at all pins.
HAL 800A
8 VDD (V) 7 6 5
VDD VOUT (V)
VDD GND
OUT
digital
analog
Fig. 2-1: Programming with VDD modulation
VDD Internally stabilized Supply and Protection Devices
Temperature Dependent Bias
Oscillator
Protection Devices
Switched Hall Plate
A/D Converter
Digital Signal Processing
D/A Converter
Analog Output
100
OUT
EEPROM Memory Supply Level Detection Lock Control GND Digital Output
Fig. 2-2: HAL800 block diagram
Micronas
5
HAL 800
ADC-READOUT Register 14 bit
Digital Output
Digital Signal Processing
A/D Converter
Digital Filter
Multiplier
Adder
Limiter
D/A Converter
TC 6 bit
TCSQ 5 bit
MODE Register RANGE FILTER 2 bit 1 bit
SENSITIVITY 14 bit
VOQ 11 bit
CLAMPLOW 10 bit
CLAMPHIGH 11 bit
LOCK 1 bit
Micronas Registers
EEPROM Memory
Lock Control
Fig. 2-3: Details of EEPROM and Digital Signal Processing
V 5
Range = 30 mT
V 5 Clamp-high = 4.5 V
Range = 150 mT
VOUT
4
Clamp-high = 4 V
VOUT
4
3
Sensitivity = 0.15
3 Sensitivity = -0.45
VOQ = 2.5 V 2 2
VOQ = -0.5 V
1 Clamp-low = 1 V
1 Clamp-low = 0.5 V
0 -40
-20
0
20 B
40 mT
0 -150 -100 -50
0
50 B
100
150 mT
Fig. 2-4: Example for output characteristics
Fig. 2-5: Example for output characteristics
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Micronas
HAL 800
2.2. Digital Signal Processing and EEPROM The DSP is the major part of this sensor and performs the signal conditioning. The parameters for the DSP are stored in the EEPROM registers. The details are shown in Fig. 2-3. Terminology: SENSITIVITY: name of the register or register value Sensitivity: name of the parameter Group 3 contains the Micronas registers and LOCK for the locking of all registers. The Micronas registers are programmed and locked during production and are read-only for the customer. These registers are used for oscillator frequency trimming, A/D converter offset compensation, and several other special settings. The ADC converts positive or negative Hall voltages (operates with magnetic north and south poles at the branded side of the package) in a digital value. This signal is filtered in the Digital Filter and is readable in the ADC-READOUT register as long as the LOCK bit is not set. Note: The ADC-READOUT values and the resolution of the system depends on the filter frequency. Positive values accord to a magnetic north pole on the branded side of the package. Fig. 2-6 and Fig. 2-7 show typical ADC-READOUT values for the different magnetic field ranges and filter frequencies. - The output voltage can be calculated as:
VOUT Sensitivity x B + VOQ
The output voltage range can be clamped by setting the registers CLAMP-LOW and CLAMP-HIGH in order to enable failure detection (such as short-circuits to VDD or GND).
The EEPROM registers consist of three groups: Group 1 contains the registers for the adaption of the sensor to the magnetic system: MODE for selecting the magnetic field range and filter frequency, TC and TCSQ for temperature characteristics of the magnetic sensitivity. Group 2 contains the registers for defining the output characteristics: SENSITIVITY, VOQ, CLAMP-LOW, and CLAMP-HIGH. The output characteristic of the sensor is defined by these 4 parameters (see Fig. 2-4 and Fig. 2-5 for examples). - The parameter VOQ (Output Quiescent Voltage) corresponds to the output voltage at B = 0 mT. - The parameter Sensitivity is defined as:
Sensitivity = VOUT B
6000
Filter = 500 Hz
1500
Filter = 2 kHz
4000 ADCREADOUT 2000
1000 ADCREADOUT 500
0
0
-2000 Range 150 mT -4000 Range 90 mT Range 75 mT Range 30 mT -6000 -200-150-100 -50 0 50 100 150 200 mT B
-500 Range 150 mT -1000 Range 90 mT Range 75 mT Range 30 mT -1500 -200-150-100 -50 0 50 100 150 200 mT B
Fig. 2-6: Typical ADC-READOUT versus magnetic field for filter = 500 Hz
Fig. 2-7: Typical ADC-READOUT versus magnetic field for filter = 2 kHz
Micronas
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HAL 800
Range The RANGE bits are the two lowest bits of the MODE register; they define the magnetic field range of the A/D converter. For all calculations, the digital value from the magnetic field of the A/D converter is used. This digital information is readable from the ADC-READOUT register.
Sensitivity = VOUT * 2048 ADC-READOUT * VDD
RANGE 0 1 2 3
Magnetic Field Range -30 mT...30 mT -75 mT...75 mT -90 mT...90 mT -150 mT...150 mT
VOQ The VOQ register contains the parameter for the Adder in the DSP. VOQ is the output voltage without external magnetic field (B = 0 mT) and programmable from - VDD up to VDD. For VDD = 5 V the register can be changed in steps of 4.9 mV. Note: If VOQ is programmed to a negative voltage, the maximum output voltage is limited to:
VOUTmax = VOQ + VDD
Filter The FILTER bit is the highest bit of the MODE register; it defines the -3 dB frequency of the digital low pass filter
FILTER 0 1
-3 dB Frequency 2 kHz 500 Hz
For calibration in the system environment, a 2-point adjustment procedure (see Section 2.3.) is recommended. The suitable Sensitivity and VOQ values for each sensor can be calculated individually by this procedure.
Clamping Voltage The output voltage range can be clamped in order to detect failures like shorts to VDD or GND. The CLAMP-LOW register contains the parameter for the lower limit. The lower clamping voltage is programmable between 0 V and VDD/2. For VDD = 5 V the register can be changed in steps of 2.44 mV. The CLAMP-HIGH register contains the parameter for the higher limit. The higher clamping voltage is programmable between 0 V and VDD. For VDD = 5 V in steps of 2.44 mV.
TC and TCSQ The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. The adaption is done by programming the TC (Temperature Coefficient) and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the magnetic sensitivity can be matched to the magnet and the sensor assembly. As a result, the output voltage characteristic can be fixed over the full temperature range. The sensor can compensate for linear temperature coefficients in the range from about -2900 ppm/K up to 700 ppm/K and quadratic coefficients from about -5 ppm/K to 5 ppm/K. Please refer to Section 4.2. on page 17 for the recommended settings for different linear temperature coefficients.
LOCK By setting this 1-bit register, all registers will be locked, and the sensor will no longer respond to any supply voltage modulation. Warning: This register cannot be reset!
Sensitivity The SENSITIVITY register contains the parameter for the Multiplier in the DSP. The Sensitivity is programmable between -4 and 4. For VDD = 5 V the register can be changed in steps of 0.00049. Sensitivity = 1 corresponds to an increase of the output voltage by VDD if the ADC-READOUT increases by 2048. ADC-READOUT This 14-bit register delivers the actual digital value of the applied magnetic field before the signal processing. This register can be read out and is the basis for the calibration procedure of the sensor in the system environment.
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Micronas
HAL 800
2.3. Calibration Procedure 2.3.1. General Procedure For calibration in the system environment, the application kit from Micronas is recommended. It contains the hardware for the generation of the serial telegram for programming and the corresponding software for the input of the register values. In this section, programming of the sensor with this programming tool is explained. Please refer to Section 5. on page 19 for information about programming without this tool. For the individual calibration of each sensor in the customer application, a two point adjustment is recommended (see Fig. 2-8 for an example). When using the application kit, the calibration can be done in three steps: Step 2: Calculation of VOQ and Sensitivity The calibration points 1 and 2 can be set inside the specified range. The corresponding values for VOUT1 and VOUT2 result from the application requirements.
Low clamping voltage VOUT1,2 High clamping voltage
For highest accuracy of the sensor, calibration points near the minimum and maximum input signal are recommended. The difference of the output voltage between calibration point 1 and calibration point 2 should be more than 3.5 V. Set the system to calibration point 1 and read the register ADC-READOUT. The result is the value ADCREADOUT1. Now, set the system to calibration point 2, read the register ADC-READOUT again, and get the value ADC-READOUT2. With these values and the target values VOUT1 and VOUT2, for the calibration points 1 and 2, respectively, the values for Sensitivity and VOQ are calculated as:
Sensitivity = VOUT1 - VOUT2 ADC-READOUT1 - ADC-READOUT2 * 2048 VDD
Step 1: Input of the registers which need not be adjusted individually The magnetic circuit, the magnetic material with its temperature characteristics, the filter frequency, and low and high clamping voltage are given for this application. Therefore, the values of the following registers should be identical for all sensors of the customer application. - FILTER (according to the maximum signal frequency) - RANGE (according to the maximum magnetic field at the sensor position) - TC and TCSQ (depends on the material of the magnet and the other temperature dependencies of the application) - CLAMP-LOW and CLAMP-HIGH (according to the application requirements) Write the appropriate settings into the HAL 800 registers. After writing, the information is stored in an internal RAM and not in the EEPROM. It is valid until switching off the supply voltage. If the values should be permanently stored in the EEPROM, the "STORE" command must be used before switching off the supply voltage.
VOQ = VOUT1 -
ADC-READOUT1 * Sensitivity * VDD 2048
This calculation has to be done individually for each sensor. Now, write the calculated values for Sensitivity and VOQ for adjusting the sensor. Use the "STORE" command for permanently storing the EEPROM registers. The sensor is now calibrated for the customer application. However, the programming can be changed again and again if necessary.
Step 3: Locking the Sensor The last step is activating the LOCK function with the "LOCK" command. The sensor is now locked and does not respond to any programming or reading commands. Warning: This register cannot be reset!
Micronas
9
HAL 800
2.3.2. Calibration of Angle Sensor The following description explains the calibration procedure using an angle sensor as an example. The required output characteristic is shown in Fig. 2-8.
V 5 Clamp-high = 4.5 V Calibration point 1 VOUT 4
- the angle range is from -25 to 25 - temperature coefficient of the magnet: -500 ppm/K
Step 1: Input of the registers which need not to be adjusted individually The register values for the following registers are given for all applications: - FILTER Select the filter frequency: 500 Hz - RANGE Select the magnetic field range: 30 mT - TC For this magnetic material: 1 - TCSQ For this magnetic material: 12 - CLAMP-LOW For our example: 0.5 V - CLAMP-HIGH For our example: 4.5 V Enter these values in the software, and use the "WRITE" command for writing the values in the registers.
1
3
2
Clamp-low = 0.5 V Calibration point 2 0 -30 -20 -10 0 10 20 Angle 30
Fig. 2-8: Example for output characteristics
This calculation has to be done individually for each sensor. Automatic Calibration:
Step 2: Calculation of VOQ and Sensitivity There are 2 ways to calculate the values for VOQ and Sensitivity Manual Calculation: Set the system to calibration point 1 (angle 1 = -25) and read the register ADC-READOUT. For our example, the result is ADC-READOUT1 = -2500. Now, set the system to calibration point 2 (angle 2 = 25), and read the register ADC-READOUT again. For our example, the result is ADC-READOUT2 = +2350. With these measurements and the targets VOUT1 = 4.5 V and VOUT2 = 0.5 V, the values for Sensitivity and VOQ are
Sensitivity = 4.5 V - 0.5 V -2500 - 2350 * 2048 = -0.3378 5V
Use the menu CALIBRATE from the PC software and enter the values 4.5 V for VOUT1 and 0.5 V for VOUT2. Set the system to calibration point 1 (angle 1 = -25), hit the button Read ADC-Readout1, set the system to calibration point 2 (angle 2 = 25), hit the button Read ADC-Readout2, and hit the button Calculate. The software will then calculate the appropriate VOQ and Sensitivity. Now, write the calculated values into the HAL 800 for programming the sensor and use the "STORE" command for permanently storing the EEPROM registers.
Step 3: Locking the Sensor The last step is activating the LOCK function with the "LOCK" command. The sensor is now locked and does not respond to any programming or reading commands. Warning: This register cannot be reset!
VOQ = 4.5 V -
-2500 * (-0.3378) * 5 V = 2.438 V 2048
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Micronas
HAL 800
3. Specifications 3.1. Outline Dimensions
4.06 0.1 1.5 0.3 x1 x2 sensitive area
3.2. Dimensions of Sensitive Area 0.25 mm x 0.25 mm
3.3. Position of Sensitive Area
y 4.05 0.1
TO-92UT x1 - x2/ 2 0.2 mm y = 1.5 mm 0.2 mm
13.0 min.
0.48 0.55 0.36 1 2 3
0.42
1.27 1.27 (2.54)
branded side
45
SPGS0014-3-A/1E
0.75 0.2
2.1 0.2
0.8
Fig. 3-1: Plastic Transistor Single Outline Package (TO-92UT) Weight approximately 0.14 g Dimensions in mm A mechanical tolerance of 50 m applies to all dimensions where no tolerance is explicitly given.
Micronas
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HAL 800
3.4. Absolute Maximum Ratings
Symbol VDD VDD -IDD IZ VOUT VOUT - VDD IOUT tSh TS TJ
1) 2) 3) 4) 5) 6)
Parameter Supply Voltage Supply Voltage Reverse Supply Current Current through Protection Device Output Voltage Excess of Output Voltage over Supply Voltage Continuous Output Current Output Short Circuit Duration Storage Temperature Range Junction Temperature Range
Pin No. 1 1 1 1 or 3 3 3,1 3 3
Min. -8.5 -14.41) 2) - -3004) -56) -56)
Max. 8.5 14.41) 2) 501) 3004) 8.53) 14.43) 2) 2
Unit V V mA mA V V mA min C C C
-10 - -65 -40 -40
10 10 150 1705) 150
as long as TJmax is not exceeded t < 10 minutes (VDDmin = -15 V for t < 1min, VDDmax = 16 V for t < 1min) as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to -14 V) t < 2 ms t < 1000h internal protection resistor = 100
Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol VDD IOUT RL CL
Parameter Supply Voltage Continuous Output Current Load Resistor Load Capacitance
Pin No. 1 3 3 3
Min. 4.5 -1 4.5 0.33
Typ. 5 - - 10
Max. 5.5 1 - 1000
Unit V mA k nF
12
Micronas
HAL 800
3.6. Electrical Characteristics at TJ = -40 C to +170 C, VDD = 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions. Typical Characteristics for TJ = 25 C and VDD = 5 V.
Symbol IDD IDD VDDZ VOZ Parameter Supply Current Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Resolution EA INL Accuracy Error over all Non-Linearity of Output Voltage over Temperature Ratiometric Error of Output over Temperature (Error in VOUT / VDD) Accuracy of Output Voltage at Clamping Low Voltage over Temperature Range Accuracy of Output Voltage at Clamping High Voltage over Temperature Range Output High Voltage Output Low Voltage Internal ADC Frequency Internal ADC Frequency over Temperature Range Response Time of Output Pin No. 1 1 Min. Typ. 7 7 Max. 10 10 Unit mA mA Conditions TJ = 25 C, VDD = 4.5 V to 8.5 V
1
17.5
20
V
IDD = 25 mA, TJ = 25 C, t = 20 ms IO = 10 mA, TJ = 25 C, t = 20 ms ratiometric to VDD 1) RL = 4.7 k (% of supply voltage)3) % of supply voltage3)
3
17
19.5
V
3 3 3
12
bit 2 1 % %
-2 -1 -1
0 0
ER
3
0
1
%
VOUT1 - VOUT2 > 2 V during calibration procedure
VOUTCL
3
-45
0
45
mV
RL = 4.7 k, VDD = 5 V
VOUTCH
3
-45
0
45
mV
RL = 4.7 k, VDD = 5 V
VOUTH VOUTL fADC fADC tr(O)
3 3
4.65
4.8 0.2 0.35 140 150
V V kHz kHz
VDD = 5 V, -1 mA IOUT 1mA VDD = 5 V, -1 mA IOUT 1mA TJ = 25 C VDD = 4.5 V to 8.5 V 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 2 kHz CL = 10 nF, time from 10% to 90% of final output voltage for a steplike signal Bstep from 0 mT to Bmax
- -
120 110
128 128
3
-
2 1
4 2
ms ms
td(O) tPOD
Delay Time of Output Power-Up Time (Time to reach stabilized Output Voltage)
3
0.1 3 2
0.5 5 3
ms ms 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 2 kHz 90% of VOUT BAC < 10 mT; 3 dB Filter frequency = 2 kHz
2)
BW
Small Signal Bandwidth (-3 dB)
3
- - - -
2
-
kHz
VOUTn ROUT RthJA
TO-92UT 1) 2) 3)
Noise Output Voltagepp Output Resistance over Recommended Operating Range Thermal Resistance Junction to Soldering Point
3 3
3 1
6 10
mV
magnetic range = 90 mT
VOUTL VOUT VOUTH
-
150
200
K/W
Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VDD/4096 peak-to-peak value exceeded: 5% if more than 50% of the selected magnetic field range are used
Micronas
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HAL 800
3.7. Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions. Typical Characteristics for TJ = 25 C and VDD = 5 V.
Symbol BOffset Parameter Magnetic Offset Magnetic Offset Change due to TJ Magnetic Hysteresis Magnetic Slew Rate 3 Pin No. 3 Min. Typ. 0 0 Max. 1 15 Unit mT Test Conditions B = 0 mT, IOUT = 0 mA, TJ = 25 C B = 0 mT, IOUT = 0 mA Range = 30 mT, Filter = 500 Hz Filter frequency = 500 Hz Filter frequency = 2 kHz BW = 10 Hz to 2 kHz
-1 -15 -20 - - - -
BOffset/T
BHysteresis SR
T/K T
mT/ms
0 12 50 10
20
- -
nmeff fCflicker fCflicker
Magnetic RMS Broadband Noise Corner Frequency of 1/f Noise Corner Frequency of 1/frms Noise
3
T
3 3
20 100
Hz Hz
B = 0 mT B = 65 mT, TJ = 25 C
3.8. Typical Characteristics
mA 20 15 IDD 10 5 0 -5 -10 -15 -20 -15 -10 IDD
mA 10 VDD = 5 V
8
6
4
TA = -40 C TA = 25 C TA=150 C -5 0 5 10 VDD 15 20 V
2
0 -50
0
50
100
150 TA
200 C
Fig. 3-2: Typical current consumption versus supply voltage
Fig. 3-3: Typical current consumption versus ambient temperature
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Micronas
HAL 800
mA 10 TA = 25 C VDD = 5 V IDD 8 ER
% 1.0 0.8 0.6 0.4
6
0.2 -0.0
4
-0.2 -0.4 VOUT/VDD = 0.82 VOUT/VDD = 0.66 VOUT/VDD = 0.5 VOUT/VDD = 0.34 VOUT/VDD = 0.18
2
-0.6 -0.8
0 -1.5 -1.0 -0.5
0.0
0.5
1.0 IOUT
1.5 mA
-1
4
5
6
7 VDD
8V
Fig. 3-4: Typical current consumption versus output current
Fig. 3-6: Typical ratiometric error versus supply voltage
dB 5 0 VOUT -3 -5
% 120 1/sensitivity 100
-10 -15
80
60 -20 -25 -30 Filter: 500 Hz -35 -40 10 Filter: 2 kHz 100 1000 fsignal 10000 Hz 0 -50 0 20 40 TC = 16, TCSQ = 8 TC = 0, TCSQ = 12
TC = -20, TCSQ = 12 TC = -31, TCSQ = 0 50 100 150 TA 200 C
Fig. 3-5: Typical output voltage versus signal frequency
Fig. 3-7: Typical 1/sensitivity versus ambient temperature
Micronas
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HAL 800
mT 1.0 0.8 BOffset 0.6 0.4 0.2 -0.0 -0.2 -0.4 -0.6 -0.8 -1 -50 200 C TC = 16, TCSQ = 8 TC = 0, TCSQ = 12
% 1.0 0.8 INL 0.6 0.4 0.2 -0.0 -0.2 -0.4 -0.6 Range = 30 mT -0.8 -1 -40
TC = -20, TCSQ = 12
0
50
100
150 TA
-20
0
20 B
40 mT
Fig. 3-8: Typical magnetic offset versus ambient temperature
Fig. 3-9: Typical nonlinearity versus magnetic field
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Micronas
HAL 800
4. Application Notes 4.1. Application Circuit For EMC protection, it is recommended to add each a ceramic 4.7 nF capacitor between ground and the supply voltage respectively the output voltage pin. In addition, the input of the controller unit should be pulleddown with a 4.7 kOhm resistor and a ceramic 4.7 nF capacitor. Please note that during programming, the sensor will be supplied repeatedly with the programming voltage of 12 V for 100 ms. All components connected to the VDD line at this time must be able to resist this voltage.
VDD
Temperature Coefficient of Magnet (ppm/K) 0
TC
TCSQ
11 8 6 4 3 1
10 10 11 11 12 12 13 13 14 14 15 15 16 17 17 18 18 18 19 19 20 21 21 22 22 23 23 24 24 26
-100 -200 -300 -400 -500 -600 -700 -800
-1 -3 -5 -6 -8 -9 -11 -13 -14 -15 -17 -18 -19 -20 -22 -23 -24 -25 -26 -27 -28 -29 -30 -31
OUT HAL800 4.7 nF 4.7 nF GND 4.7 nF 4.7 k
-900
C
-1000 -1100 -1200 -1300 -1400
Fig. 4-1: Recommended application circuit
4.2. Temperature Compensation The relation between the temperature coefficient of the magnet and the corresponding TC and TCSQ codes for a linear compensation is given in the following table. In addition to the linear change of the magnetic field with temperature, the curvature can be adjusted, too. For that purpose, TC and TCSQ have to be changed to combinations that are not given in the table. Please contact Micronas for more detailed information.
-1500 -1600 -1700 -1800 -1900 -2000 -2100
Temperature Coefficient of Magnet (ppm/K) 700 600 500 400 300 200 100
TC
TCSQ
-2200 -2300
29 26 23 21 18 16 14
8 9 9 9 9 9 10
-2400 -2500 -2600 -2700 -2800 -2900
Micronas
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HAL 800
4.3. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions, the following equation is valid: 4.4. EMC and ESD The HAL 800 is designed for a stabilized 5 V supply. Interferences and disturbances conducted along the 12 V onboard system (product standards DIN40839 part 1 or ISO 7637 part 1) are not relevant for these applications. For applications with disturbances by capacitive or inductive coupling on the supply line or radiated disturbances, the application circuit shown in Fig. 4-1 is recommended. Applications with this arrangement passed the EMC tests according to the product standards DIN 40839 part 3 (Electrical transient transmission by capacitive or inductive coupling) and part 4 (Radiated disturbances). Please contact Micronas for the detailed investigation reports with the EMC and ESD results.
T = IDD * VDD * RthJA
For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For VDD = 5.5 V, Rth = 200 K/W and IDD = 10 mA the temperature difference T = 11 K. For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax -T
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Micronas
HAL 800
5. Programming of the Sensor 5.1. Definition of Programming Pulses The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with a serial telegram on the output pin. The bits in the serial telegram have a different Bit time for the VDD-line and the output. The Bit time for the VDD-line is defined through the length of the Sync Bit at the beginning of each telegram. The Bit time for the output is defined through the Acknowledge Bit. A logical 0 is coded as no voltage change within the Bit time. A logical 1 is coded as a voltage change between 50% and 80% of the Bit time. After each bit a voltage change occurs. command has been processed the sensor answers with an Acknowledge Bit (logical 0) on the output.
- Read a register (see Fig. 5-3) After evaluating this command the sensor answers with the Acknowledge Bit, 14 Data Bits, and the Data Parity Bit on the output. - Programming the EEPROM cells (see Fig. 5-4) After evaluating this command the sensor answers with the Acknowledge Bit. After the delay time tw the supply voltage rises up to the programming voltage.
tr VDDH logical 0 VDDL tp0
tf tp0
or
5.2. Definition of the Telegram
VDDH
tp1 tp0 or tp0
Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), the Command Parity Bit (CP), 4 bits for the Address (ADR), and the Address Parity Bit (AP). There are 3 kinds of telegrams:
logical 1 VDDL tp1
Fig. 5-1: Definition of logical 0 and 1 bit
- Write a register (see Fig. 5-2) After the AP Bit follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is valid and the
Table 5-1: Telegram parameters
Symbol VDDL VDDH tr tf tp0 tpOUT tp1 VDDPROG tPROG trp tfp tw Parameter Supply Voltage for Low Level during Programming Supply Voltage for High Level during Programming Rise time Fall time Bit time on VDD Bit time on output pin Pin 1 Min. 5 Typ. 5.6 Max. 6 Unit V Remarks
1
6.8
8.0
8.5
V
1 1 1 3 3.4 4 3.5 6
0.05 0.05 3.6 8
ms ms ms ms tp0 is defined through the Sync Bit tpOUT is defined through the Acknowledge Bit % of tp0 or tpOUT
Voltage Change for logical 1 Supply Voltage for Programming the EEPROM Programming Time for EEPROM Rise time of programming voltage Fall time of programming voltage Delay time of programming voltage after Acknowledge
1, 3 1
50 11.95
65 12
80 12.1
% V
1 1 1 1
95 0.2 0 0.5
100 0.5
105 1 1
ms ms ms ms
0.7
1
Micronas
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HAL 800
WRITE Sync VDD Acknowledge VOUT COM CP ADR AP DAT DP
Fig. 5-2: Telegram for coding a Write command
READ Sync VDD Acknowledge VOUT DAT DP COM CP ADR AP
Fig. 5-3: Telegram for coding a Read command
ERASE, PROM, LOCK, and LOCKI VDDPROG
trp
tPROG
tfp
Sync VDD
COM
CP
ADR
AP
Acknowledge VOUT tw
Fig. 5-4: Telegram for coding the EEPROM programming
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Micronas
HAL 800
5.3. Telegram Codes Address parity bit (AP) This parity bit is 1, if the number of zeros within the 4 Address bits is uneven. The parity bit is 0, if the number of zeros is even.
Sync Bit Each telegram starts with the Sync Bit. This logical 0 pulse defines the exact timing for tp0.
Data Bits (DAT) Command Bits (COM) The Command code contains 3 bits and is a binary number. Table 5-2 shows the available commands and the corresponding codes for the HAL 800. The 14 Data Bits contain the register information. The registers use different number formats for the Data Bits. These formats are explained in Section 5.4. In the Write command the last bits are valid. If for example the TC register (6 bits) is written, only the last 6 bits are valid. In the Read command the first bits are valid. If for example the TC register (6 bits) is read, only the first 6 bits are valid.
Command Parity Bit (CP) This parity bit is 1, if the number of zeros within the 3 Command Bits is uneven. The parity bit is 0, if the number of zeros is even.
Address Bits (ADR) The Address code contains 4 bits and is a binary number. Table 5-3 shows the available addresses for the HAL 800 registers.
Data Parity Bit (DP) This parity bit is 1, if the number of zeros within the binary number is even. The parity bit is 0, if the number of zeros is uneven.
Table 5-2: Available Commands Command READ WRITE PROM ERASE LOCKI LOCK Code 2 3 4 5 6 7 Explanation read a register write a register program all nonvolatile registers (except the lock bits) erase all nonvolatile registers (except the lock bits) lock Micronas lockable register lock the whole device and switch permanently to the analog-mode
Please note: The Micronas lock bit (LOCKI) has already been set during production and cannot be reset.
Micronas
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HAL 800
5.4. Number Formats Two-complementary number: The first digit of positive numbers is 0, the rest of the number is a binary number. Negative numbers start with 1. In order to calculate the absolute value of the number, you have to calculate the complement of the remaining digits and to add 1. Example:
Binary number: The most significant bit is given as first, the least significant bit as last digit. Example: 101001 represents 41 decimal.
0101001 represents +41 decimal 1010111 represents -41 decimal
Signed binary number: The first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). Example:
0101001 represents +41 decimal 1101001 represents -41 decimal
Table 5-3: Available register addresses Parameter CLAMP-LOW CLAMP-HIGH VOQ SENSITIVITY MODE LOCKR ADC-READOUT TC TCSQ Code 1 2 3 4 5 6 7 11 12 Data Bits 10 11 11 14 3 1 14 6 5 Format binary binary two compl. binary signed binary binary binary two compl. binary signed binary binary Customer read/write/program read/write/program read/write/program read/write/program read/write/program lock read read/write/program read/write/program Range and filter parameters see Table 5-4 for details Lock Bit Remark Low clamping voltage High clamping voltage
Micronas registers (read only for customers) Parameter OFFSET FOSCAD SPECIAL IMLOCK Code 8 9 13 14 Data Bits 4 5 6 1 binary Format two compl. binary binary Remark ADC offset adjustment Oscillator frequency adjustment special settings Lock Bit for the Micronas registers
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Micronas
HAL 800
5.5. Register Information MODE - The register range is from 0 up to 7 and contains the settings for FILTER and RANGE
CLAMP-LOW - The register range is from 0 up to 1023. - The register value is calculated by:
CLAMP-LOW = Low Clamping Voltage VDD * 2048
ADC-READOUT - This register is read only.
- The register range is from -8192 up to 8191.
TC and TCSQ
CLAMP-HIGH - The register range is from 0 up to 2047. - The register value is calculated by:
CLAMP-HIGH = High Clamping Voltage VDD * 2048
- The TC register range is from -31 up to 31,
- The TCSQ register range is from 0 up to 31. Please refer Section 4.2. on page 17 for the recommended values.
5.6. Programming Information VOQ If you want to change the content of any register (except the lock registers) you have to write the desired value into the corresponding RAM register at first. If you want to permanently store the value in the EEPROM, you have to send an ERASE command first and a PROM command afterwards. The address within the ERASE and PROM command is not important. ERASE and PROM acts on all registers in parallel. If you want to change all registers of the HAL 800, you can send all writing commands one after each other and send one ERASE and PROM command at the end.
- The register range is from -1024 up to 1023.
- The register value is calculated by:
VOQ = VOQ VDD * 1024
SENSITIVITY
- The register range is from -8192 up to 8191.
- The register value is calculated by:
SENSITIVITY = Sensitivity 2048
Table 5-4: Parameters for the MODE register MODE 0 1 2 3 4 5 6 7 FILTER 0 0 0 0 1 1 1 1
-3 dB Frequency
2 kHz 2 kHz 2 kHz 2 kHz 500 Hz 500 Hz 500 Hz 500 Hz
RANGE 0 1 2 3 0 1 2 3
Magnetic Field Range
-30 mT...30 mT -75 mT...75 mT -90 mT...90 mT -150 mT...150 mT -30 mT...30 mT -75 mT...75 mT -90 mT...90 mT -150 mT...150 mT
Micronas
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HAL 800
6. Data Sheet History 1. Advance information: "HAL 800 Programmable Linear Hall Effect Sensor, Aug. 24, 1998, 6251-441-1AI. First release of the advance information. 2. Final data sheet: "HAL 800 Programmable Linear Hall Effect Sensor, Oct. 20, 1999, 6251-441-1DS. First release of the final data sheet.
Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany Order No. 6251-441-1DS
All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH.
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Micronas

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